Portarentur Zhanxin Electronics

Ut ab initio 2024, Zhanxin Electronics cumulate exigebat SiC MOSFET 6kk, IC 36kk, et SiC SBD 8kk. Zhanxin Electronics integram administrationem systematis in sua SiC laganum officinam in Yiwu, Zhejiang constituit, et ISO9001 certificationem qualitatis administrationis systematis, IATF16949 certificationem pro automotivae industriae qualitatis administratione systemate constituit, ISO 14001 certificationem pro environmental administratione systemate, et ISO45001 certificationem pro sanitate et administratione procurationis occupational. Praecipua producta current includunt: 1200V 17mΩ/30mΩ/40mΩ, 80mΩ, 160mΩ, 1700V 1Ω et 2000V SiC MOSFET, SiC specialium ProDrive™ IVCR140x, et 1200V 20A, 30A, 40A SiC SBD.