Plures incepta semiconductor domestica novos progressus fecerunt

Nuper aliquot incepta semiconductor domestica novos progressus fecerunt, semiconductores tertii generationis obtegentes ut carbidam silicon (SiC), gallium nitride (GaN), IGBT, memoria, astula autocineta, fasciculus semiconductor, instrumentus semiconductor/materiales, etc., implicantes societates ut Huawei, Tianyue, gallium nitridum (GaN), IGBT, memoria, astula autocineta, fasciculus semiconductor, instrumentus semiconductor/materiales, etc., implicantes societates ut Huawei, Tianyue, gallium nitridum (GaN), IGBT, memoria, astula autocineta, fasciculus semiconductor, instrumentus semiconductor/materiales, etc., implicantes societates ut Huawei, Tianyue Provectus, Xinchi technologiae technologiae Septentrionalis, Rheng.