Pure semiconductor product performance

The 1200V SiC MOSFET platform technology is mature, and multiple specifications of products have been mass-produced, and have passed the AEC-Q101 automotive-grade certification and 960V-H3TRB reliability verification; the first domestically mass-produced 15V drive SiC MOSFET series products have been launched, and all performance indicators have reached or exceeded international similar products, achieving nearly one million SiC MOSFET chip shipments, serving many leading customers in the photovoltaic and energy storage industries; the 1200V 14mΩ SiC MOSFET with the lowest on-resistance in China has been launched, which has passed the Tier1 manufacturer verification, and its performance is comparable to the international mainstream main drive chip, and is currently being verified by many car companies. In March 2022, Qingchun Semiconductor was introduced to Ningbo Qianwan New Area and settled in the new area to build the company headquarters and R&D center. It is reported that the headquarters of Qingchun Semiconductor (Ningbo) Co., Ltd. covers an area of ​​4,600 square meters, and has built four major experimental platforms: device performance test platform, wafer test and aging platform on the first floor; reliability and application platform on the third floor; device test and aging platform on the fourth floor. The total planned area of ​​the laboratory is over 2,500 square meters and is equipped with world-leading power device parameter testing and reliability equipment. The total investment in the platform is nearly 100 million yuan, and it has the ability to support the testing and screening of nearly 10 million silicon carbide devices per month.