Hebei Tongguang Semiconductor launches a project to produce 200,000 8-inch silicon carbide single crystal substrates per year

On February 11, Hebei Tongguang Semiconductor Co., Ltd. held a ceremony to unveil the National Enterprise Technology Center and launch a project to produce 200,000 8-inch silicon carbide single crystal substrates per year in Baoding National High-tech Industrial Development Zone. The total investment of the project is expected to be 882 million yuan, and it is expected to be fully put into production in 2027. Zheng Qingchao, chairman of Tongguang Semiconductor, said that this will be of great significance to improving the core technology independence, high-end industrial chain, and scale of industrial clusters of Baoding's third-generation semiconductors.