The construction of China's first 6-inch gallium oxide single crystal and epitaxial wafer growth line started in Fuyang, Hangzhou

On September 10, the 6-inch gallium oxide single crystal and epitaxial wafer growth line of Hangzhou Fuga Gallium Technology Co., Ltd. started construction in Fuyang, Hangzhou. This is the first 6-inch gallium oxide single crystal and epitaxial wafer growth line in China. The 6-inch single crystal growth technology that started at the same time as the international one and the epitaxial technology that is more suitable for mass production will "change lanes and overtake", and help the high-quality and rapid development of the new ultra-wide bandgap semiconductor gallium oxide industry chain.