Innoscience mass produces 1200V high-voltage GaN devices

Innoscience (02577) announced on April 14 that its independently developed 1200V gallium nitride (GaN) products have been successfully put into mass production. This product has wide bandgap characteristics and shows significant advantages in high voltage and high frequency scenarios. It is particularly suitable for use in new energy vehicles, industry, AI data centers and other fields. The product's breakthrough design solves the efficiency bottleneck of the on-board charging system of the 800V electric vehicle platform, helping to improve the efficiency of the energy conversion system and achieve miniaturization of the equipment.