Energizer Semiconductor achieves mass production of 8-inch sapphire-based gallium nitride power devices

Chipone Semiconductor recently announced that it has partnered with a leading international 8-inch fab to achieve mass production of the world's first 8-inch sapphire-based gallium nitride (GaN) power device. This achievement marks a significant advancement in GaN technology, particularly in terms of chip size, production cost, electrical performance, and manufacturing consistency. Furthermore, these devices have passed numerous reliability tests, including HTRB, H3TRB, and HTGB. Chipone Semiconductor emphasized that its supply chain has been significantly strengthened, enabling it to provide automotive-grade, high-quality products.