ON Semiconductor's vGaN devices can withstand voltages of 1200V and above.

According to published performance specifications, vertical gallium nitride (vGaN) devices can withstand voltages of 1200V and above, with prototype devices even reaching 3300V. vGaN-based systems are claimed to reduce power conversion losses by up to 50%. The higher switching frequency of these devices allows for a corresponding reduction in the size of inductors, capacitors, and magnetic components.