On Semiconductor and Innoscience sign a memorandum of understanding

On Semiconductor and Innoscience today announced the signing of a Memorandum of Understanding (MoU) to assess opportunities to accelerate the deployment of gallium nitride (GaN) power devices, starting with 40-200V power devices and significantly expanding the customer base. The collaboration outlined in the MoU combines On Semiconductor's leadership in integrated systems and packaging with Innoscience's mature GaN technology and high-volume production capabilities to deliver cost-effective, high-efficiency GaN products for the industrial, automotive, telecommunications infrastructure, consumer electronics, and AI data center markets.