Feizheng Semiconductor Leads Innovation in Silicon Carbide Power Devices

As one of the earliest companies in China engaged in the research and development of silicon carbide devices, Feizheng Semiconductor has shipped a total of 34 million 1200V silicon carbide devices, holding a 50% market share in the charging pile market. Feizheng Semiconductor has launched its fourth-generation silicon carbide MOSFET, which, through optimized cell process and terminal structure, reduces RSP to 1.8mΩ·cm², significantly improving current output capability and reducing system cost. This technology also achieves a 30% reduction in static loss and a 16% optimization in dynamic loss.