The main plant of Qingzhou Silicon-based GaN Power Device Manufacturing Project has been capped

The main plant of the silicon-based gallium nitride power device semiconductor manufacturing project jointly built by Qingzhou City and Beijing Saiwei Electronics has been capped, marking an important progress in the project. The total investment of the project is 1 billion yuan, and it is expected to eventually form an annual production capacity of 60,000 pieces, with 30,000 pieces in the first phase. The project aims to improve the technical level of third-generation semiconductor gallium nitride and help Weifang build a high-end manufacturing base.