New 62mm half-bridge module uses 2000V SiC M1H chip

Infineon's newly launched 62mm CoolSiC™ MOSFET half-bridge module uses 2000V SiC M1H chips and is available in 2.6mΩ and 3.5mΩ specifications. The module has improved VGS(th), RDS(on) drift and gate drive voltage window performance. In addition, a pre-applied thermal interface material (TIM) version is also available.