Infineon M1H CoolSiC™ MOSFET Technology and Reliability Analysis

Infineon Technologies has launched the M1H CoolSiC™ MOSFET, which uses asymmetric trench gate technology to balance performance and reliability. This technology effectively solves the reliability problem of the SiC MOSFET gate oxide layer and improves device performance. The M1H chip has a low failure rate and improved gate oxide layer quality, which greatly reduces threshold drift. In addition, the MOSFET promises short-circuit capability, with a single tube having a short-circuit time of 3us at a gate voltage of 15V.