Infineon's 62mm half-bridge module with 1200V SiC M1H chip

Infineon's new 1200V SiC M1H chip 62mm half-bridge module has been launched with a maximum specification of 1mΩ. The module uses M1H chip technology to improve the performance of VGS(th), RDS(on) drift and gate drive voltage window. In addition, a pre-coated thermal interface material (TIM) version is also available. This module is suitable for electric vehicle charging, photovoltaic inverters and UPS.