Samsung Electronics launches 12nm DDR5 DRAM and begins mass production

Samsung Electronics recently announced that its 16Gb DDR5 DRAM using 12nm process technology has entered mass production. This new generation of DRAM has higher energy efficiency and productivity, and will optimize next-generation computing applications including artificial intelligence. Compared with the previous generation, the new DRAM has a 23% reduction in power consumption and a 20% increase in wafer productivity. In addition, it can support a maximum speed of 7.2 Gbit/s, which is equivalent to processing approximately two 30GB ultra-high-definition movies per second. Samsung will continue to expand its 12nm DRAM product lineup to meet market demand.