STMicroelectronics launches high-performance gallium nitride device PowerGaN

STMicroelectronics recently announced the start of mass production of high-performance gallium nitride (GaN) devices PowerGaN, designed to improve the power conversion efficiency of automotive electrification systems. The series includes two industrial-grade 650V normally-off G-HEMT™ transistors, SGT120R65AL and SGT65R65AL, which are packaged in PowerFLAT 5x6 HV and provide rated currents of 15A and 25A respectively. It is expected that in the coming months, STMicroelectronics will also launch PowerGaN devices suitable for the automotive field, as well as more power packaging forms.