Hangzhou Gallium Semiconductor Co., Ltd. cooperates with universities to develop 6-inch gallium oxide single crystal substrates

Hangzhou Gallium Semiconductor Co., Ltd. cooperated with the Advanced Semiconductor Research Institute of Hangzhou International Science and Technology Innovation Center of Zhejiang University and the National Key Laboratory of Silicon and Advanced Semiconductor Materials to successfully develop a 6-inch unintentionally doped and conductive gallium oxide (β-Ga2O3) single crystal substrate. This achievement was made possible by the independent research and development and innovation of the team led by Academician Yang Deren.