Development of Silicon Carbide Single Crystal Growth Technology

Silicon carbide single crystal growth technologies mainly include physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and liquid phase methods. PVT is the current mainstream preparation method, but the growth rate is slow. HTCVD has a faster growth rate and shows great potential. The liquid phase method was popular in the 1960s, but with the technological breakthrough of the PVT method, it was gradually marginalized. However, due to the challenges encountered by the PVT method in manufacturing large-size SiC crystals and reducing costs, the liquid phase method has once again attracted the attention of the industry.