Zhanxin Electronics' second-generation SiC MOSFET chip achieves a 25% reduction in on-resistance

The second-generation SiC MOSFET chips launched by Zhanxin Electronics have achieved a 25% reduction in on-resistance compared to the previous generation of products by optimizing the gate oxide process and channel design, thereby reducing device losses and improving system efficiency. These chips are developed based on the technology platform of Zhejiang Zhanxin Electronics SiC wafer factory. Since September 2023, more than a dozen mass-produced products using the same generation of technology platform have been launched.