Luxshare Semiconductor Materials Co., Ltd. invests 10 billion yuan to build a silicon carbide substrate project

Hefei Luxiao Semiconductor Materials Co., Ltd. plans to invest a total of 10 billion yuan to build a silicon carbide substrate material research and development and production base. The project is divided into three phases. The first phase is expected to invest 2.1 billion yuan. After completion, it will have an annual production capacity of 240,000 conductive silicon carbide substrates and 50,000 epitaxial wafers. In addition, the company has signed long-term procurement contracts with downstream customers, and sales are expected to reach tens of billions of yuan in the next few years.