German scientists develop first all-silicon electrically pumped continuous-wave semiconductor laser

Scientists from Helmholtz-Zentrum Jülich, University of Stuttgart and Leibniz Institute for High Performance Microelectronics in Germany, in collaboration with French research institute CEA-Leti, have successfully developed the first all-silicon-group electrically pumped continuous-wave semiconductor laser. The laser is made of ultra-thin layers of silicon-germanium-tin and germanium-tin stacked directly on a silicon wafer. This breakthrough opens up new possibilities for on-chip integrated photonics and has been published in Nature.