The world's first 8-inch silicon photonic thin-film lithium niobate wafer was successfully developed

The world's first 8-inch silicon photonic thin-film lithium niobate wafer has been successfully developed in Jiufengshan Laboratory. This achievement uses the technology of bonding 8-inch SOI silicon photonic wafer and 8-inch lithium niobate wafer to achieve monolithic integration of optoelectronic transceiver functions, representing the most advanced technology of silicon-based compound optoelectronic integration.