Infineon Technologies Launches Next-Generation Silicon Carbide (SiC) MOSFET Trench Gate Technology

Infineon Technologies has launched a new generation of silicon carbide (SiC) MOSFET trench gate technology, which improves the main performance indicators of MOSFET by 20%, thereby improving energy efficiency and promoting the process of low carbonization. The next generation of CoolSiC MOSFET G2 technology will continue to leverage the performance advantages of silicon carbide, reduce energy loss, and improve efficiency in the power conversion process.