Domestic silicon carbide substrate technology has achieved a breakthrough

In China, important breakthroughs have been made in silicon carbide substrate technology. Shandong Tianyue Company, Beijing Tianke Heda Company and Hebei Tongguang Crystal Company have respectively carried out technical cooperation and transformation with Shandong University, the Institute of Physics of the Chinese Academy of Sciences and the Institute of Semiconductors of the Chinese Academy of Sciences, and successfully developed 6-inch conductive SiC substrates and high-purity semi-insulating SiC substrates. In addition, domestic enterprises have achieved mass production of 4-inch substrates and made progress in the research and development of 6-inch substrates.