Denso and Fuji Electric jointly develop SiC semiconductor project and receive government subsidies

The Ministry of Economy, Trade and Industry of Japan recently announced that it will provide subsidies for the silicon carbide (SiC) semiconductor project jointly invested by Denso and Fuji Electric, with a total investment of 211.6 billion yen (about 10.2 billion yuan), of which the subsidy amount can reach up to 70.5 billion yen (about 3.4 billion yuan). In this cooperation, Denso will be responsible for the production of SiC substrates, while Fuji Electric will be responsible for the manufacture of SiC power devices and plans to expand related facilities. The project is expected to have an annual production capacity of 310,000 pieces, and will start supplying from May 2027.