Keyou Semiconductor successfully prepared ultra-large silicon carbide single crystal

On May 29, Keyou Semiconductor announced that it had successfully developed several conductive 6-inch silicon carbide single crystals with a center thickness of more than 80mm and a thinnest part of more than 60mm. This is the first time in China that a silicon carbide raw blank with a thickness of more than 60mm has been displayed. It is said that this method can reduce costs by 70%.