SK Key Foundry Confirms 650V GaN HEMT Device Characteristics

SK Key Foundry, a South Korean 8-inch pure wafer foundry, recently announced that it has successfully confirmed the characteristics of 650V gallium nitride (GaN) high electron mobility transistor (HEMT) devices and is increasing its development efforts, which are expected to be completed within the year. GaN is known for its high-speed switching and low-resistance characteristics and is considered to be the next generation of power semiconductors. Compared with existing silicon (Si)-based semiconductors, GaN has the advantages of lower loss, higher efficiency and smaller size. The main application areas include power supplies, hybrid and electric vehicles, solar inverters, etc. SK Key Foundry plans to promote 650V GaN HEMT for existing power semiconductor users and seek new customers. In addition, the company also plans to expand its GaN product portfolio to provide a variety of voltage options for GaN HEMT and GaN IC.