Hunan Sanan Semiconductor releases 8-inch silicon carbide single crystal material progress report

Dr. Gao Yuqiang, assistant to the general manager of Hunan Sanan Semiconductor, proposed that reducing costs is the key to the silicon carbide industry chain, especially the substrate and epitaxial parts. Although the liquid phase method is widely mentioned, the gas phase method is still the mainstream mass production process. In addition, the yield and growth rate of silicon carbide still need to be improved. Sanan Semiconductor's 8-inch substrate plus epitaxial loss is about 4%, and it faces the problem of difficult cutting. In the future, reducing thickness will be the main direction of reducing costs.