Nexperia develops and produces three process devices at its Hamburg plant in Germany

To meet the growing long-term demand for efficient power semiconductors, Nexperia will develop and produce three process (SiC, GaN and Si) devices at its Hamburg plant in Germany starting in June 2024. In the same month, the company's high-voltage GaN d-mode transistor and SiC diode production lines will begin production. Nexperia said its next milestone will be the construction of modern, cost-effective 8-inch production lines for SiC MOSFET and low-voltage GaN HEMT. These production lines are expected to be completed at the Hamburg plant within the next two years.