Hello, our company pioneered the liquid phase method to produce 8-inch crystals with low defect density. What is the difference between the gas phase method and the liquid phase method in actual mass production? What is the difference in defect rate and production cost? Thank you

Tianyue Advanced: Dear investors, hello! The key step in producing silicon carbide single crystal substrates is the growth of single crystals, which is also the main technical difficulty in the application of silicon carbide semiconductor materials. It is a technology-intensive and capital-intensive link in the industrial chain. The main methods for producing single crystals of silicon carbide are physical vapor transport (PVT), high-temperature vapor chemical deposition (HT-CVD), and liquid phase method (LPE). Among them, the PVT method is currently the large-scale silicon carbide crystal growth method in the industry. Liquid phase SiC crystal growth technology has many advantages, and theoretically has high crystal quality, which has attracted great attention in the industry. However, the large-scale application of the liquid phase method still has industrial difficulties that need to be overcome. At present, the liquid phase method has not yet achieved industrial large-scale production. The company actively explores and deploys forward-looking technologies, including the liquid phase method (LPE method) process in crystal growth technology. At the 2023Semicon Forum, Dr. Gao Chao, the company's chief technology officer, reported on the company's core technology and forward-looking research and development. The 8-inch crystal with low defect density was prepared by the liquid phase method, which is the first in the industry. The company will continue to increase its R&D efforts, constantly break through technical bottlenecks, accelerate product innovation, and consolidate and enhance the company's leading position in the industry. Thank you for your attention!