Apro Semicon Completes 5 Billion KRW Series A Investment and Launches 50 Billion KRW Series B Funding

Apro Semicon recently announced that it has successfully developed 8-inch 1200V silicon-based gallium nitride (GaN-on-Si) epitaxial wafers and plans to start mass production at the end of this year. The product has a breakdown voltage of up to 1600V, enabling efficient power conversion, and the quality and thickness uniformity of the epitaxial wafers have reached 99%. Following the successful acquisition of 5 billion won in Series A investment last year, Apro Semicon is currently seeking 50 billion won in Series B financing to accelerate the mass production of its GaN epitaxial wafers. Part of the financing will be used to introduce new MOCVD equipment to further invest in its GaN epitaxial wafer mass production plant in Gumi.