Ruifuxin Technology plans to invest 1.0-1.5 billion yuan to build an automotive-grade SiC semiconductor power module industrialization project

Ruifuxin Technology announced that it had signed the "Automotive Grade SiC Semiconductor Power Module Industrialization Project Strategic Cooperation Framework Agreement" with Jiangsu Dongtai High-tech Zone on the 9th. The company will invest 1.0-1.5 billion yuan to build a second R&D center and industrial production base, committed to promoting the industrialization of SiC semiconductor power modules. The first phase of the start-up capital investment is 100 million yuan, which comes from Ruifuxin Technology's Pro-A round of financing, and the lead investor is the Collaborative Innovation Fund.