Guangdong Xinyue Energy successfully developed the first generation of silicon carbide trench MOSFET process platform

After two years of technical research and development and testing, Guangdong Xinyueneng Semiconductor Co., Ltd. has successfully developed the first generation of silicon carbide trench MOSFET process platform. This technology has the advantages of reducing specific on-resistance and increasing current density, and can effectively break through the bottleneck problem of improving planar MOSFET performance, further improve chip performance and significantly reduce costs. At present, the highest yield of the 1200V trial product of this technology exceeds 97%, the on-resistance is 12.5mΩ at a chip size of 23mm2, and the specific on-resistance is 2.3mΩ•cm2.