Shenzhen Pinghu Laboratory Achieves Major Breakthrough in SiC JFET Technology

The Shenzhen Pinghu Laboratory recently announced significant progress in silicon carbide junction field-effect transistor (SiC JFET) technology. They have successfully developed a 750V planar SiC JFET device with specifications reaching international advanced levels. The device boasts a breakdown voltage exceeding 980V, a specific on-resistance as low as 1.3mΩ·cm², and a gate parasitic resistance of less than 2Ω (@35mΩ specification device). These technical parameters surpass those of similar international planar SiC JFET products.