Xike Semiconductor successfully achieved mass production of 8-inch SiC epitaxial wafers

Xike Semiconductor Technology (Suzhou) Co., Ltd. announced that its R&D team has successfully achieved homogeneous epitaxial growth on domestically produced 8-inch (200mm) silicon carbide (SiC) substrates and has the capacity to mass-produce 8-inch SiC epitaxial wafers. The quality of the 8-inch SiC epitaxial wafers produced by the company has reached the international advanced level, and the yield rate of 3mm*3mm die has reached more than 97%.