Zhejiang University Hangzhou International Science and Technology Innovation Center successfully grew 100 mm thick 6-inch silicon carbide single crystals

Zhejiang University Hangzhou International Science and Technology Innovation Center Advanced Semiconductor Research Institute-Dry Crystal Semiconductor Joint Laboratory used the pull-type physical vapor transport (PPVT) method to successfully grow a 6-inch silicon carbide single crystal with a thickness exceeding 100 mm. This achievement will help reduce the cost of silicon carbide substrates.