Jiangxi Gangfeng Technology's 400,000-piece SiC substrate project environmental impact assessment public notice

Jiangxi Gangfeng Technology recently announced the environmental impact assessment information of its annual production of 400,000 pieces of third-generation semiconductor substrate epitaxy construction project (Phase I). The project covers an area of ​​83,060.76 square meters, with a total investment of 4.5 billion yuan, and aims to build SiC semiconductor substrate production lines and related plant facilities. After the project is completed, it is expected to have an annual production capacity of 400,000 pieces of third-generation semiconductor substrate epitaxy. Jiangxi Gangfeng said that this move is aimed at meeting the market demand for high-performance semiconductor substrate materials and promoting the company's technological innovation and industrial upgrading in the semiconductor field.