Asahi Kasei's aluminum nitride semiconductor substrate material usage area increased by 4.5 times

Asahi Kasei of Japan has successfully expanded the use area of ​​its aluminum nitride substrate for power semiconductors to 4.5 times that of the past. Using a 4-inch (about 100 mm) diameter substrate, the use area has been expanded from 80% to 99%. The company plans to start supplying samples to semiconductor manufacturers and strive to make the substrate practical by 2027.