Qinghe Wafer achieves 8-inch SiC bonding substrate preparation

In April, China Qinghe Wafer Co., Ltd. announced that it had successfully made a breakthrough in the preparation of 8-inch SiC bonding substrates. In addition, Qinghe Wafer invested 990 million yuan to build the first composite SiC substrate production line in China in Tianjin High-tech Zone. The production line was officially put into operation in May last year, with a planned production capacity of 30,000 pieces per year.